View RF3146D_7514965.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 of 16 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt no t for new designs functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. ordering information RF3146D dual-band gsm900/dcs power amp module the rf3146 is a high-power, high-efficiency power amplifier module with integrated power control. the device is a self-contained 7 mm x 7 mm x 0.9 mm lead frame mod- ule (lfm) with 50 input and output terminals. the power control function is also incorporated, eliminating the need for directional couplers, detector diodes, power control asics and other power control circuitry; this allows the module to be driven directly from the dac output. the device is designed for use as the final rf ampli- fier in egsm900 and dcs handheld digital cellular equipment and other applica- tions in the 880 mhz to 915 mhz and 1710 mhz to 1785 mhz bands. on-board power control provides over 50 db of control range with an analog voltage input; and, power down with a logic ?low? for standby operation. features ? integrated v reg ? complete power control solution ? +35 dbm gsm output power at 3.5 v ? +33 dbm dcs output power at 3.5 v ? 60% gsm and 55% dcs eff ? 7 mm x 7 mm x 0.9 mm package size applications ? 3 v dual-band gsm handsets ? commercial and consumer sys- tems ? portable battery-powered equip- ment ? egsm900/dcs products ? gprs class 12 compatible ? power star tm module RF3146D dual-band gsm900/dcs power amp module RF3146D sb power amp module 5-piece sample pack RF3146Dpcba-41x fully assembled evaluation board rev a12 ds091005 not for new designs 9 9 RF3146Ddual- band gsm900/dcs power amp module package style: lfm, 48-pin, 7 mm x 7 mm x 0.9 mm
2 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs absolute maximum ratings parameter rating unit supply voltage -0.3 to +6.0 v dc power control voltage (v ramp ) -0.3 to +1.8 v input rf power +10 dbm max duty cycle 50 % output load vswr 10:1 operating case temperature -20 to +85 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. overall power control v ramp power control ?on? 1.5 v max. p out , voltage supplied to the input power control ?off? 0.2 0.25 v min. p out , voltage supplied to the input v ramp input capacitance 15 20 pf dc to 2 mhz v ramp input current 10 av ramp = v ramp max turn on/off time 2 sv ramp = 0.2 v to v ramp max tx enable ?on? 1.4 v tx enable ?off? 0.5 v gsm band enable 0.5 v dcs/pcs band enable 1.4 v overall power supply power supply voltage 3.0 3.5 5.5 v specifications v nominal operating limits power supply current 1 ap in < -30 dbm, tx enable = low, temp = -20c to +85c ma v ramp = 0.2 v, tx enable = high overall control signals band select ?low? 0 0 0.5 v band select ?high? 1.4 2.0 3.0 v band select ?high? current 20 50 a tx enable ?low? 0 0 0.5 v tx enable ?high? 1.4 2.0 3.0 v tx enable ?high? current 1 2 a caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eu directive 2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 16 no t for new designs RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. parameter specification unit condition min. typ. max. overall (gsm900 mode) temp = +25 c, v batt = 3.5 v, v ramp = v ramp max , p in = 3 dbm, freq = 880 mhz to 915 mhz, 25% duty cycle, pulse width = 1154 s operating frequency range 880 to 915 mhz maximum output power +34 dbm temp = 25c, v batt = 3.5 v, v ramp = v ramp max 32 dbm temp = +85 c, v batt = 3.0 v, v ramp = v ramp max total efficiency 53 58 % at p out max , v batt = 3.5 v input power range 0 +3 +5 dbm maximum output power guaranteed at mini- mum drive level output noise power -86 -80 dbm rbw = 100 khz, 925 mhz to 935 mhz, p out > +5 dbm -88 -84 dbm rbw = 100 khz, 935 mhz to 960 mhz, p out > +5 dbm forward isolation 1 -45 -35 dbm tx enable = low, p in = +5 dbm forward isolation 2 -30 -15 dbm tx enable = high, v ramp = 0.2 v, p in = +5 dbm cross band isolation 2 f 0 -15 dbm v ramp = 0.2 v to v ramp = v ramp_rp second harmonic -15 -10 dbm v ramp = 0.2 v to v ramp = v ramp_rp third harmonic -25 -15 dbm v ramp = 0.2 v to v ramp = v ramp_rp all other non-harmonic spurious -36 dbm v ramp = 0.2 v to v ramp max input impedance 50 input vswr 2.5:1 v ramp = 0.2 v to v ramp max output load vswr stability 8:1 spurious<-36 dbm, rbw = 3 mhz set v ramp where p out < 34 dbm into 50 load output load vswr ruggedness 10:1 set v ramp where p out < 34 dbm into 50 load. no damage or permanent degradation to part. output load impedance 50 load impedance presented at rf out pad power control v ramp power control range 50 db v ramp = 0.2 v to v ramp max notes: v ramp max = 0.4 * v batt + 0.06 < 1.5 v v ramp_rp = v ramp set for 34 dbm at nominal conditions
4 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs parameter specification unit condition min. typ. max. overall (dcs mode) temp = 25c, v batt = 3.5 v, v ramp = v ramp max , p in = 3 dbm, freq = 1710 mhz to 1785 mhz, 25% duty cycle, pulse width = 1154 s operating frequency range 1710 to 1785 mhz maximum output power +31.5 dbm temp = 25c, v batt = 3.5 v, v ramp = v ramp max 29.5 dbm temp = +85c, v batt = 3.0 v, v ramp = v ramp max total efficiency 44 52 % at p out max, v batt = 3.5 v input power range 0 +3 +5 dbm maximum output power guaranteed at mini- mum drive level output noise power -85 -80 dbm rbw = 100 khz, 1805 mhz to 1880 mhz, p out > 0 dbm, v batt = 3.5 v forward isolation 1 -50 -35 dbm tx enable = low, p in = +5 dbm forward isolation 2 -25 -15 dbm tx enable = high, v ramp = 0.2 v, p in = +5 dbm second harmonic -15 -7 dbm v ramp = 0.2 v to v ramp = v ramp_rp third harmonic -20 -15 dbm v ramp = 0.2 v to v ramp = v ramp_rp all other non-harmonic spurious -36 dbm v ramp = 0.2 v to v ramp max input impedance 50 input vswr 2.5:1 v ramp = 0.2 v to v ramp max output load vswr stability 8:1 spurious<-36 dbm, rbw = 3 mhz set v ramp where p out < 31.5 dbm into 50 load output load vswr ruggedness 10:1 set v ramp where p out < 31.5 dbm into 50 load. no damage or permanent degradation to part. output load impedance 50 load impedance presented at rf out pin power control v ramp power control range 50 db v ramp = 0.2 v to v ramp max , p in = +5 dbm notes: v ramp max = 0.4 * v batt + 0.06 < 1.5 v v ramp_rp = v ramp set for 31.5 dbm at nominal conditions
5 of 16 no t for new designs RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. pin function description interface schematic 1nc internal circuit node. do not externally connect. 2 vcc2 gsm controlled voltage input to the gsm driver stage. this voltage is part of the power control function for the module. this node must be connected to vcc out. this pin should be externally decoupled. 3nc internal circuit node. do not externally connect. 4 gnd internally connected to the package base. 5 gnd internally connected to the package base. 6 gsm900 out rf output for the gsm band. this is a 50 output. the output matching circuit and dc-block are internal to the package. 7 gnd internally connected to the package base. 8nc internal circuit node. do not externally connect. 9nc internal circuit node. do not externally connect. 10 nc internal circuit node. do not externally connect. 11 nc internal circuit node. do not externally connect. 12 nc internal circuit node. do not externally connect. 13 nc no internal or external connection. 14 nc internal circuit node. do not externally connect. 15 nc internal circuit node. do not externally connect. 16 nc internal circuit node. do not externally connect. 17 nc internal circuit node. do not externally connect. 18 vcc3 gsm controlled voltage input to the gsm output stage. this voltage is part of the power control function for the module. this node must be connected to vcc out. this pin should be externally decoupled. 19 vcc out controlled voltage output to feed vcc2 and vcc3. this voltage is part of the power control function for the module. it cannot be connected to any pins other than vcc2 and vcc3. 20 vcc out controlled voltage output to feed vcc2 and vcc3. this voltage is part of the power control function for the module. it cannot be connected to any pins other than vcc2 and vcc3. 21 vcc3 dcs controlled voltage input to the dcs output stage. this voltage is part of the power control function for the module. this node must be connected to vcc out. this pin should be externally decoupled. see pin 18. 22 nc internal circuit node. do not externally connect. 23 nc internal circuit node. do not externally connect. 24 nc no internal or external connection. 25 nc internal circuit node. do not externally connect. 26 nc internal circuit node. do not externally connect. 27 nc internal circuit node. do not externally connect. 28 nc internal circuit node. do not externally connect. 29 nc internal circuit node. do not externally connect. 30 gnd internally connected to the package base.
6 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs pin function description interface schematic 31 dcs out rf output for the dcs band. this is a 50 output. the output matching cir- cuit and dc-block are internal to the package. see pin 6. 32 gnd internally connected to the package base. 33 nc internal circuit node. do not externally connect. 34 gnd internally connected to the package base. 35 vcc2 dcs controlled voltage input to the dcs driver stage. this voltage is part of the power control function for the module. this node must be connected to vcc out. this pin should be externally decoupled. see pin 2. 36 nc no internal connection. connect to ground plane close to the package pin. 37 dcs in rf input to the dcs band. this is a 50 output. 38 nc no internal connection. connect to ground plane close to the package pin. 39 vcc1 dcs controlled voltage on the gsm and dcs preamplifier stages. this voltage is applied internal to the package. this pin should be externally decoupled. 40 band sel allows external control to select the gsm or dcs bands with a logic high or low. a logic low enables the gsm bands, whereas a logic high enables the dcs/pcs bands. 41 tx enable this signal enables the pa module for operation with a logic high. both bands are disabled with a logic low. 42 vbatt power supply for the module. this pin should be externally decoupled and connected to the battery. 43 vbatt power supply for the module. this pin should be externally decoupled and connected to the battery. 44 nc internal circuit node. do not externally connect. 45 vramp ramping signal from dac. a simple rc filter may be required depending on the selected baseband. 46 vcc1 gsm internally connected to vcc1 (pin 39). no external connection required. see pin 39. 47 gnd1 gsm ground connection for the gsm preamplifier stage. connect to ground plane close to the package pin. 48 gsm850/ gsm900 in rf input to the gsm band. this is a 50 input. see pin 37. pkg base gnd connect to ground plane with multiple via holes. see recommended foot- print.
7 of 16 no t for new designs RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. package drawing
8 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs pin out
9 of 16 no t for new designs RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. application schematic
10 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs evaluation board schematic
11 of 16 no t for new designs RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. evaluation board layout board size 2.0? x 2.0? board thickness 0.032?, board material fr-4, multi-layer
12 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs theory of operation overview the rf3146 is a dual-band egsm900 and dcs1800 power amplifier module that incorporates an indirect closed loop method of power control. this simplifies the phone design by eliminating the need for the complicated control loop design. the indirec t closed loop appears as an open loop to the user and can be driven directly from the dac output in the baseband circuit. theory of operation the indirect closed loop is essentially a closed loop method of power control that is invisible to the user. most power control systems in gsm sense either forward power or collector/drain current. the rf3146 does not use a power detector. a high- speed control loop is incorporated to regulate the collector voltage of the amplifier while the stage are held at a constant bi as. the v ramp signal is multiplied by a factor of 2.65 and the collector voltage for the second and third stages are regulated to the multiplied v ramp voltage. the basic circuit is shown in the following diagram. by regulating the power, the stages are held in saturation across all power levels. as the required output power is decreased from full power down to 0 dbm, the collector voltage is also decreased. this regulation of output power is demonstrated in equation 1 where the relationship between collector voltage and output power is shown. although load impedance affects out- put power, supply fluctuations are the dominate mode of power variations. with the rf3146 regulating collector voltage, the dominant mode of power fluctuations is eliminated. (eq. 1) there are several key factors to consider in the implementation of a transmitter solution for a mobile phone. some of them are: ? current draw and system efficiency ? power variation due to supply voltage ? power variation due to frequency ? power variation due to temperature ? input impedance variation ? noise power ? loop stability ? loop bandwidth variations across power levels ? burst timing and transient spectrum trade offs ? harmonics p dbm 10 2 v cc v sat ? ? () 2 8 r load 10 3 ? ?? --------------------------------------------- log ? =
13 of 16 no t for new designs RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. output power does not vary due to supply voltage under normal operating conditions if v ramp is sufficiently lower than v batt . by regulating the collector voltage to the pa the voltage sensitivity is essentially eliminated. this covers most cases where t he pa will be operated. however, as the battery discharges and approaches its lower power range the maximum output power from the pa will also drop slightly. in this case it is important to also decrease v ramp to prevent the power control from inducing switching transients. these transients occur as a result of the control loop slowing down and not regulating power in accor- dance with v ramp . the switching transients due to low battery conditions are regulated by incorporating the following relationship limiting the maximum v ramp voltage (equation 2). although no compensation is required for typical battery conditions, the battery compen- sation required for extreme conditions is covered by the relationship in equation 2. this should be added to the terminal soft- ware. (eq. 2) due to reactive output matches, there are output power variations across frequency. there are a number of components that can make the effects greater or less. the components following the power amplifier often have insertion loss variation with respect to frequency. usually, there is some length of microstrip that follows the power amplifier. there is also a frequency response found in directional couplers due to variation in the coupling factor over frequency, as well as the sensitivity of the detector diode. since the rf3146 does not use a directional coupler with a diode detector, these variations do not occur. input impedance variation is found in most gsm power amplifiers. this is due to a device phenomena where c be and c cb (c gs and c sg for a fet) vary over the bias voltage. the same principle used to make varactors is present in the power amplifiers. the junction capacitance is a function of the bias across the junction. this produces input impedance variations as the vapc voltage is swept. although this could present a problem with frequency pulling the transmit vco off frequency, most synthe- sizer designers use very wide loop bandwidths to quickly compensate for frequency variations due to the load variations pre- sented to the vco. the rf3146 presents a very constant load to the vco. this is because all stages of the rf3146 are run at constant bias. as a result, there is constant reactance at the base emitter and base collector junction of the input stage to the power amplifier. noise power in pa's where output power is controlled by changing the bias voltage is often a problem when backing off of out- put power. the reason is that the gain is changed in all stages and according to the noise formula (equation 3), (eq. 3) the noise figure depends on noise factor and gain in all stages. because the bias point of the rf3146 is kept constant the gain in the first stage is always high and the overall noise power is not increased when decreasing output power. power control loop stability often presents many challenges to transmitter design. designing a proper power control loop involves trade-offs affecting stability, transient spectrum and burst timing. in conventional architectures the pa gain (db/ v) varies across different power levels, and as a result the loop bandwidth also varies. with some power amplifiers it is possible for the pa gain (control slope) to change from 100 db/v to as high as 1000 db/v. the challenge in this scenario is keeping the loop bandwidth wide enough to meet the burst mask at low slope regions which often causes instability at high slope regions. the rf3146 loop bandwidth is determined by internal bandwidth and the rf output load and does not change with respect to power levels. this makes it easier to maintain loop stability with a high bandwidth loop since the bias voltage and collector v olt- age do not vary. v rampmax 0.4 v batt 0.06 1.5 v + ? = f tot f 1 f 21 ? g 1 ---------------- f 31 ? g 1 g 2 ? ------------------- ++ =
14 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs an often overlooked problem in pa control loops is that a delay not only decreases loop stability it also affects the burst tim ing when, for instance the input power from the vco decreases (or increases) with respect to temperature or supply voltage. the burst timing then appears to shift to the right especially at low power levels. the rf3146 is insensitive to a change in input power and the burst timing is constant and requires no software compensation. switching transients occur when the up and down ramp of the burst is not smooth enough or suddenly changes shape. if the control slope of a pa has an inflection point within the output power range or if the slope is simply too steep it is difficult to pre- vent switching transients. controlling the output power by changing the collector voltage is as earlier described based on the physical relationship between voltage swing and output power. furthermore all stages are kept constantly biased so inflection points are nonexistent. harmonics are natural products of high efficiency power amplifier design. an ideal class ?e? saturated power amplifier will pro - duce a perfect square wave. looking at the fourier transform of a square wave reveals high harmonic content. although this is common to all power amplifiers, there are other factors that contribute to conducted harmonic content as well. with most power control methods a peak power diode detector is used to rectify and sense forward power. through the rectification pro- cess there is additional squaring of the waveform resulting in higher harmonics. the rf3146 address this by eliminating the need for the detector diode. therefore the harmonics coming out of the pa should represent the maximum power of the har- monics throughout the transmit chain. this is based upon proper harmonic termination of the transmit port. the receive port termination on the t/r switch as well as the harmonic impedance from the switch itself will have an impact on harmonics. should a problem arise, these terminations should be explored. the rf3146 incorporates many circuits that had previously been required external to the power amplifier. the shaded area of the diagram below illustrates those components and the following table itemizes a comparison between the rf3146 bill of materials and a conventional solution. component conventional solution rf3146 power control asic $0.80 n/a directional coupler $0.20 n/a buffer $0.05 n/a attenuator $0.05 n/a various passives $0.05 n/a mounting yield (other than pa) $0.12 n/a total $1.27 $0.00
15 of 16 no t for new designs RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. pcb design requirements pcb surface finish the pcb surface finish used for rfmd?s qualification process is electroless nickel, immersion gold. typical thickness is 3 inch to 8 inch gold over 180 inch nickel. pcb land pattern recommendation pcb land patterns are based on ipc-sm-782 standards when possible. the pad pattern shown has been developed and tested for optimized assembly at rfmd; however, it may require some modifications to address company specific assembly pro- cesses. the pcb land pattern has been developed to accommodate lead and package tolerances. pcb metal land pattern figure 1. pcb metal land pattern (top view)
16 of 16 RF3146D rev a12 ds091005 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. no t for new designs pcb solder mask pattern liquid photo-imageable (lpi) solder mask is recommended. the solder mask footprint will match what is shown for the pcb metal land pattern with a 2 mil to 3 mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or requested from the pcb fabrication supplier. thermal pad and via design thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on thru-hole vias with 0.203 mm to 0.330 mm finished hole size on a 0.5 mm to 1.2 mm grid pattern with 0.025 mm plating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. figure 2. pcb solder mask pattern (top view)

▲Up To Search▲

Price & Availability of RF3146D

	To Download RF3146D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .